Sum frequency generation in pure zinc-blende GaAs nanowires
                    
                        
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منابع مشابه
HRTEM assessment of Wurtzite and Zinc-Blende phases in GaAs nanowires for optoelectronic devices
1 Semiconductor nanowires have recently attracted a lot of interest as potential building blocks for future electronic and optoelectronic nanodevices. In this work structural and optical properties of semiconductor nanowires are studied by means of high resolution transmission electron microscopy (HRTEM) and photoluminescence (PL) analysis respectively. Several samples of GaAs nanowires grown u...
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Martin Heiss,1,2 Sonia Conesa-Boj,2,3 Jun Ren,4 Hsiang-Han Tseng,4 Adam Gali,5 Andreas Rudolph,6 Emanuele Uccelli,1,2 Francesca Peiró,3 Joan Ramon Morante,7,3 Dieter Schuh,6 Elisabeth Reiger,6 Efthimios Kaxiras,4 Jordi Arbiol,8 and Anna Fontcuberta i Morral1,2,* 1Walter Schottky Institut and Physik Department, Technische Universität München, Am Coulombwall 3, D-85748 Garching, Germany 2Laborato...
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We develop a nucleation-based model to explain the formation of the wurtzite phase during the catalyzed growth of freestanding nanowires of zinc blende semiconductors. We show that in vapor-liquid-solid nanowire growth, nucleation generally occurs preferentially at the triple phase line. This entails major differences between zinc blende and wurtzite nuclei. Depending on the pertinent interface...
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Fraunhoffer Institut fur Lasertechnik, Philips Extreme UV GmbH, Royal Institute of Technology Sweden, PLEX LLC. Disco Corporation, http://www.disco.co.jp/ Exitech Ltd., http://www.exitech.co.uk/ Lamda Physik, http://www.lambdaphysik.de/ Meyer KA, Besemann DM and Wright JC (2003) Coherent two dimensional spectroscopy with triply vibrationally enhanced infrared four-wave mixing. Chemical Physics ...
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ژورنال
عنوان ژورنال: Optics Express
سال: 2013
ISSN: 1094-4087
DOI: 10.1364/oe.21.028432